Abstract

A status report on the Center for Advanced Microstructures and Devices (CAMD) at Louisiana State University is presented. The centerpiece of CAMD is a 1.2 GeV electron storage ring optimized for X-ray lithography research. Currently, research is under way to design an optimized beamline for X-ray lithography. Some of the parameters of the storage ring and the requirements for the facility to house the storage ring are described. Preliminary results on the available power at the wafer plane for exposure utilizing the CAMD storage ring are presented and compared to those of two other storage rings in the US. Calculations on the photon power incident on a vertical wafer plane are presented for a beamline containing two Be windows and two grazing incidence gold reflecting mirrors. >

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