Abstract
We present the first successful attempt to identify the Ni impurity level in indium phosphide. Ni-doped n-type InP crystals were investigated using deep level transient spectroscopy and optical absorption. A new electron trap with energy of 0.27±0.02 eV below the InP conduction band and an electron capture cross section of 10−13 cm2 was found. In the absorption spectrum a new zero-phonon line with energy of 0.57 eV was observed. We interpret these results as an observation of a Ni2+/Ni+ double acceptor level and an optical intracenter transition 2T2→2E within the Ni+(3d9) configuration. A vacuum-referred binding energy of the nickel double acceptor state in InP determined in our experiment is in good agreement with the vacuum-referred binding energies of the nickel impurity in GaAs and GaP.
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