Abstract
Within the effective-mass approximation and using a variational method the binding energies of hydrogenic impurities in spherical GaAs-(Ga,Al)As quantum dots are calculated considering the effect of a spatially dependent screening through an r-dependent dielectric response. It is found that the r-dependent dielectric response increases the binding energies when compared with those found using constant screening. The effect is more important for acceptors than for donors and must be taken into account in calculations that include the binding energies of acceptors impurities in GaAs-(Ga,Al)As quantum dots.
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