Abstract
In this article, the authors have designed an experiment to artificially introduce the recently proposed zinc-site nitrogen complex acceptors. The novel acceptors have been introduced in ZnO film samples grown at an atmosphere with extra-high oxygen partial pressure. The shallowness of the nitrogen complex acceptors has been experimentally verified. The concentration of the nitrogen-related complex acceptors could be tuned by varying the VI/II ratio in gas during growth. The modulation of the carrier concentration has been observed in accordance with the change of the complex concentration. Although theories predict higher formation rate of the complexes as monotonically increasing the oxygen chemical potential, experiments show that oxygen interstitials and/or antisite oxygen would compete the formation of the zinc-site nitrogen acceptors at extra-oxygen-rich gaseous condition.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
