Abstract
(AlAs)1/2(GaAs)1/2 fractional-layer superlattices are grown on a (001) vicinal substrate by metalorganic chemical vapor deposition. The substrate is misoriented to [1̄10] by 1.92° and [110] by 0.10{degree}. A large surface area of the superlattice is observed by bright field transmission electron microscopy (TEM). The superlattice periods are uniform and no undulation is observed, which is the same quality as that of normal superlattices. The results suggest the ideal growth from a kink site occurs during MOCVD growth, and the distances between kink sites are equal.
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