Abstract
(AlAs) 1/2(GaAs) 1/2 fractional-layer superlattices are grown on various GaAs (001) vicinal substrates by metalorganic chemical vapor deposition (MOCVD). When the substrate is misoriented to [ 1 10] by 1.92° and [110] by 0.10°, uniform superlattice periods are observed over a large surface area by bright field transmission electron microscopy (TEM). These results suggest that ideal growth from a kink site occurs during MOCVD growth, and that the distances between kink sites are equal. On a substrate misoriented to [110] by 1.90°, the superlattice periods exhibit an undualtion. This shows that kink flow mode growth is not dominant in the [110] direction. On a substrate misoriented to [010] by 2.0°, no superlattice period were observed. The growth mechanisms are discussed on the basis of these results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
