Abstract
The cause of remarkably strong photoluminescence (PL) intensity from (110) surfaces of n-type InP was investigated by in situ measurements of PL intensity in a vacuum of 4×10−7 Torr and in various ambients. The surface cleaved in the vacuum showed about 10 times lower intensity than that for the surface cleaved in air. The strong PL intensity cleaved in air was ascribed to a reduction of surface recombination velocity due to adsorption of H2O and/or O2 molecules onto the intrinsic surface. The strong PL intensity for surfaces cleaved in air, O2, and wet N2 were more or less unstable and decreased under photoexcitation. Normalized surface recombination velocity for the surface cleaved in air was ζ≲1, which was much less than that for GaAs (ζ≳10).
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