Abstract
Chemisorbed ruthenium ions on the surface of n-GaAs decrease the surface recombination velocity of electrons and holes from 5×105 to 3.5×104 cm/sec. It is shown that the ions, in a one-third monolayer thickness, are confined to the surface and do not form a new junction by diffusing into the GaAs. This use of Ru appears to be the first observation of the reduction of the surface recombination velocity for GaAs by the simple chemisorption of ions.
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