Abstract
AbstractThe Hall coefficient R and specific resistance ρ have been measured in p‐InSb:Cr, with a hole concentration of about 1012 cm–3 at T = 77 K, as a function of pressure up to P = 1.5 GPa at T = 77 and 300 K. The deep acceptor level is found to be located at the distance εA2 = 0.11 eV from the top of the valence band. The pressure coefficient of the valence band maximum ∂εV/∂P was determined relative to the vacuum in semiconductors Ge, InSb, InAs, and GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
