Abstract
AbstractThe Hall coefficient R and specific resistance ρ have been measured in p‐InSb:Cr, with a hole concentration of about 1012 cm–3 at T = 77 K, as a function of pressure up to P = 1.5 GPa at T = 77 and 300 K. The deep acceptor level is found to be located at the distance εA2 = 0.11 eV from the top of the valence band. The pressure coefficient of the valence band maximum ∂εV/∂P was determined relative to the vacuum in semiconductors Ge, InSb, InAs, and GaAs.
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