Abstract
A method is proposed for determining the constants of absolute volume deformation potentials at edges of the conduction and valence bands in semiconductors. This method is based on (i) the volume-concentration effect, (ii) the concept that the energy of deep-lying strongly localized impurity centers does not depend on the hydrostatic pressure, and (iii) the use of experimental data on the electrical resistivity and Hall coefficient. For Ge, GaAs, InAs, and InSb semiconductors, the constants of absolute volume deformation potentials at edges of the conduction and valence bands are determined from our results and data available in the literature.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
