Hydrogenic impurity states in zinc-blende InGaN quantum dot

Abstract

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) InGaN/GaN cylindrical quantum dot (QD) is investigated using a variational procedure. Numerical results show that the donor binding energy is highly dependent on impurity position and QD size. The donor binding energy E b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the dot height (radius) is increased.