Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot

Abstract

Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity position and QD size. The donor binding energy E b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the QD height (radius) is increased.