Hydrogenation of the CuPL center in silicon

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The CuPL center, a complex of four copper atoms in silicon with the zero-phonon photoluminescence line at 1014 meV and the donor level at 0.1 eV above the top of the valence band, is studied in the process of hydrogenation at 380 K. Complexes of a substitutional copper atom (Cus) with one and two hydrogen atoms are observed to form in the hydrogenated region at the expense of CuPL, while no isolated Cus atoms are detected. Our results indicate that the addition of a single hydrogen atom induces the dissociation of all interstitial Cu atoms which decorate the Cus core of the CuPL center.