Abstract
Silicon carbide thin layers have been obtained by reactive magnetron sputtering in a hydrogen-rich plasma at substrate temperatures, Ts, varying between 200°C and 600°C. The analysis of the infrared absorption spectra reveal an abrupt transition from amorphous phase to a crystalline fraction fc exceeding 30% when Ts is increased to 300°C. The fc value continues to increase for higher values of Ts. The evolutions of the optical parameters deduced from the modeling of the spectroscopic ellipsometry spectra are quite consistent with the observed structural change. The increase of the refractive index reflects the improvement of both crystallinity and compactness of the layers, while the crystallized SiC samples appear more absorbent than monocrystalline SiC. The heterojunction diodes fabricated from the deposition of our layers on c-Si wafers have shown good rectifying behavior, as well as a low leakage current. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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