Hydrogen transport in doped and undoped polycrystalline silicon

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Hydrogen diffusion in B, P, and undoped poly-Si is investigated. The diffusion activation energy, E A, depends significantly on the Fermi energy, E F, and the H concentration. E A varies between 0.1 eV and 1.69 eV, accompanied by a variation of the diffusion prefactor D 0 by 12 orders of magnitude. Using the theoretical value of D 0, the energy E ¯ A required to yield the measured diffusion coefficients was calculated. E ¯ A depends strongly on E F and agrees well with the theoretical E F dependence of the formation energies of H + or H −. To account for this behavior a modified H transport model based on trap-limited diffusion is proposed.