Trap-limited diffusion of hydrogen in precursor derived amorphous Si–B–C–N-ceramics

Abstract

Listen

Translate article

The tracer diffusion of hydrogen is studied in precursor derived amorphous Si–C–N and Si–B–C–N ceramics using deuterium as a tracer and secondary ion mass spectrometry (SIMS). Since the amorphous ceramics are separated in carbon rich phases (amorphous carbon and amorphous C(BN) x , respectively) and silicon rich phases (amorphous Si 3N 4 and amorphous Si 3+(1/4) x C x N 4− x , respectively) we additionally measured the diffusivities of hydrogen in amorphous carbon, in amorphous SiC and in amorphous C–B–N films. The silicon rich phases are identified as diffusion paths for hydrogen in the precursor derived ceramics. Diffusion of hydrogen in these materials is explained with a trap limited diffusion mechanism with a single trap level. We found activation enthalpies of about 2 eV for the precursor derived ceramics, where the activation enthalpy is the sum of a migration enthalpy and a binding enthalpy. The low values for the pre-exponential factors of less than 10 −7 m 2/s can be explained with an appropriate expression for the entropy factor.