Abstract
Abstract Hydrogen sulfide (H 2 S) treatment of GaAs substrates was examined by means of in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscope (AFM) observations. Its effects on initial stage of molecular beam epitaxy (MBE) of ZnSe were also investigated. According to the H 2 S treatment conditions, an atomically flat surface with (4 × 3) reconstruction or a faceted surface with (2 × 6) reconstruction was obtained. Clear RHEED intensity oscillations over 40 cycles were observed just after starting the growth on the (4 × 3) surface, showing two-dimensional (2D) nucleation, i.e., layer-by-layer growth of ZnSe. Etch pit density (EPD) of the epilayer was about 2.5 × 10 6 cm −2 , which was much lower than that obtained by the ever applied ammonium-sulfide ((NH 4 ) 2 S x ) treatment.
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