Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

Abstract

Up to 30 periods of the intensity oscillations of reflection high energy electron diffraction (RHEED) during the growth of ZnSe on GaAs(110) by molecular beam epitaxy (MBE) were observed for the first time. The GaAs(110) surface was obtained by cleaving a GaAs(100) wafer in ultra high vacuum (UHV). The oscillation behavior was strongly dependent on the partial beam pressure ratio p(Se)/ p(Zn). Stable oscillations were obtained at a p(Se)/ p(Zn) of 1.0 and a growth temperature of 250° C. The optimum growth conditions were different from those for ZnSe growth on a GaAs(100) surface. From double crystal X-ray diffraction measurements, epitaxial growth was confirmed to be pseudomorphic.