Abstract
Reflection high energy electron diffraction (RHEED) intensity oscillations are reported for GaAs growth by molecular beam epitaxy (MBE) on singular GaAs (110) substrates. The behavior is quite different from that observed for any other system involving a singular surface and elemental sources, in that the oscillation period is a function of temperature, flux ratio, and growth time. The results are discussed in terms of possible growth modes and relative adatom populations.
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