Abstract
ABSTRACTHydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.
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