Hydrogen passivation and reactivation of thermal donors in silicon.

Abstract

The dissociation of individual thermal-donor--hydrogen (TD-H) complexes is studied by means of infrared absorption, capacitance-voltage profiling, and deep-level transient spectroscopy. Contrary to earlier reports we determine the following dissociation energies: ${\mathit{E}}_{\mathit{D}}$(TD1-H)=1.90\ifmmode\pm\else\textpm\fi{}0.20 eV, ${\mathit{E}}_{\mathit{D}}$(TD2-H)=1.67\ifmmode\pm\else\textpm\fi{}0.28 eV, and for a mixture of different TD complexes ${\mathit{E}}_{\mathit{D}}$(\ensuremath{\Sigma}TD-H)=1.61\ifmmode\pm\else\textpm\fi{}0.15 eV. Our results ask for different core structures for TD1 and TDn with n\ensuremath{\ge}2.