Abstract
The release of saturated 300 eV D + implants in graphite by 6–30 keV H + bombardment has been measured at temperatures between 295 and 473 K and fluences up to more than 3 × 10 18 H +-ions/cm 2. The decrease of retained D is found to be slower than exponential. Release rates decrease with increasing energy indicating that detrapping is primarily due to atomic collisons. A faster release is observed at higher target temperatures during H + bombardment and some enhancement persists if the target is annealed after deuterium implantation. The release of low energy implants by high energy ions cannot be described by the local mixing model. Instead, a model accounting for local molecular recombination and detrapping gives qualitative agreement with experimental dependence on H + energy. It cannot, however, explain the temperature dependence.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call