Hydrogen Implantation into CVD Amorphous Silicon

Abstract

Hydrogen ions were implanted into phosphorus-doped CVD amorphous silicon at 20 keV with the dose of 5×1016 cm-2. The native defects in as-grown films were efficiently passivated by the implanted hydrogen atoms, after removal of implantation-induced defects by annealing at 300°C. As a result, the doping efficiency and photoconductive response were dramatically improved. The density of gap states for hydrogen implanted CVD amorphous silicon is estimated to be by about two orders of magnitude lower than that of as-grown one.