Abstract
AbstractThe defect structure of BaTiO3 thin films grown on (100) Si was examined using transient photocapacitance spectroscopy. The concentration, optical cross section and associated energy levels of both native and impurity defects in as-grown and annealed BaTiO3 films were evaluated. Deep level defects withpeak energies of Ev+1.8, Ev+2.4, Ev+2.7, Ev+3.0-3.1 and Ev+3.2-3.3 eV were observed in the as-grown films. Upon vacuum annealing, the concentration of the traps at Ev+3.0 and Ev+3.2 eV increased while the concentration of the traps at Ev+ 1.8 and Ev+2.4 eV decreased. The levels at Ev+3.0-3.1 and Ev+3.2-3.3 eV are attributed to oxygen vacancies. The other levels are tentatively ascribed to Fe and Fe related defects.
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