:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Abstract

In article number 1801189, Chuan Liu and co-workers present hydrogen doped IGZO thin-film transistors induced by simple SINX encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra-high current and apparent device mobility, which is 40 times higher than the carrier mobility.