Abstract
Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes.
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