Abstract
The deposition rate of the films by chemical vapor deposition was calculated using a model that is simpler than previous models. Conservation of mass, momentum and the energy equation were solved numerically for two and three dimensional flow around the substrates. It was shown that the vorticity gradient distributions on the substrates calculated from the velocity distribution are qualitatively in good agreement with those of the experimental deposition rate of the SiN films on the Si substrate for two dimensional flow. For the calculated three dimensional flow around the rectangular substrates set up in the circular cylinder, recirculation perpendicular to the flow direction which is considered to have an influence on the deposition rate of the films was observed around the substrate.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
