Abstract
Simulation of gas-phase and surface chemistry is an essential part in numerical study of chemical vapor deposition for film growth. When integrated with a model for transport processes such as gas flow, heat transfer, and mass transfer, it allows the prediction of gas-phase composition, film deposition rate, and film uniformity. For halide-assisted chemical vapor deposition of silicon carbide film growth, three-dimensional simulation of the deposition process can be time-consuming due to the large number of chemical reactions involved. In this study, a simplified chemical reaction mechanism was developed for silicon carbide growth with silicon tetrachloride and propane as precursors. After model validation, the reduced reaction steps were implemented into a three-dimensional simulation of halide-assisted chemical vapor deposition to predict the distributions of gas velocity, temperature, concentration of the intermediate reactants, and film deposition rate. Specifically, the effects of deposition pressure...
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