Hybrid TFET-MOSFET circuit: A solution to design soft-error resilient ultra-low power digital circuit

Abstract

In this work, to increase the reliability of low power digital circuits in the presence of soft errors, the use of both III-V TFET- and III-V MOSFET-based gates is proposed. The hybridization exploits the facts that the transient currents generated by particle hits in TFET devices are smaller compared to those of the MOSFET-based devices while MOSFET-based gates are superior in terms of electrical masking of soft errors. In this approach, the circuit is basically implemented using InAs TFET devices to reduce the power and energy consumption while gates that can propagate generated soft errors are implemented using InAs MOSFET devices. The decision about replacing a subset of TFET-based gates by their corresponding MOSFET-based gates is made through a heuristic algorithm. Furthermore, by exploiting advantages of TFETs and MOSFETs, a hybrid TFET-MOSFET soft-error resilient and low power master-slave flip-flop is introduced. To assess the efficacy of the proposed approach, the proposed hybridization algorithm is applied to some sequential circuits of ISCAS’89 benchmark package. Simulation results show that the soft error rate of the TFET-MOSFET-based circuits due to particle hits are up to 90% smaller than that of the purely TFET-based circuits. Furthermore, energy and leakage power consumptions of the proposed hybrid circuits are up to 79% and 70%, respectively, smaller than those of the MOSFET-only designs.