Abstract
Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO)films are fabricated using the potentiostatic method from high-purity(99.999%) aluminum films at a low temperature of approximately0–10 °C to avoid dissolution effects at room temperature (RT). In this study, we havedemonstrated the fabrication of PAA film from commercial purity (99%) aluminumat RT using a hybrid pulse technique which combines pulse reverse and pulsevoltages for the two-step anodization. The reaction mechanism is investigated by thereal-time monitoring of current. A possible mechanism of hybrid pulse anodization isproposed for the formation of pronounced nanoporous film at RT. The structureand morphology of the anodic films were greatly influenced by the duration ofanodization and the type of voltage. The best result was obtained by first applyingpulse reverse voltage and then pulse voltage. The first pulse reverse anodizationstep was used to form new small cells and pre-texture concave aluminum as aself-assembled mask while the second pulse anodization step was for the resultingPAA film. The diameter of the nanopores in the arrays could reach 30–60 nm.
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