Abstract
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.
Highlights
OIPs are not stable in humidity and ambient atmosphere, so devices break down quickly[17]
ZnO is already used as an air-stable cathode in polymer light emitting diodes[23], and has been applied in solar cells as charge transport layer that shields the photoactive layer from the ambient air[24]
We fabricated air-stable OIP (CH3NH3PbI3)-based ReRAM devices passivated by metal-oxide layers that are deposited by different methods such as solution process and atomic layer deposition (ALD) process
Summary
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. We demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. Al2O3 layers fabricated using atomic layer deposition (ALD) have been used as protective coatings for copper[26], and as gas-diffusion barriers for polymer substrates[27] These features may protect the perovskite device from moisture. We fabricated air-stable OIP (CH3NH3PbI3)-based ReRAM devices passivated by metal-oxide layers that are deposited by different methods such as solution process and ALD process. All-solution-processed Au/ZnO/CH3NH3PbI3/ITO memory devices showed reliable operation for 30 d in ambient air, and Al/ALD_AlOx/CH3NH3PbI3/ITO memory devices showed bipolar resistive switching property for 30 d in ambient air This concept of with metal-oxide layer passivation could realize perovskite memory devices that work stably in ambient air
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