Resistive switching mechanisms of High-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

Abstract

Now a day the resistive switching memory device is a promising candidate owing to its highly non-volatility, scalability potential, low power consumption and reliability aspects. The resistive memory devices using oxide materials such as HfO 2 , NiO, CuO, Cr doped SrTiO 3 , etc. have been reported by several groups. Recently, resistive switching memory devices using Ag doped GeSe or GeS solid electrolyte have been also reported [1]. Sakamoto et al. reported the resistive memory device in a Cu/Ta 2 O 5 /Pt structure [2]. Recently J.H.Jo et. al.[3] reported the high density crossbar memristive system using a-Si. The resistive memory device using Cu and IrOx/Gd 2 O 3 /W structure is not reported yet. In this study, resistive switching characteristic with a small via of 1μm in a Cu and IrOx/Gd 2 O 3 /W structure has been investigated for the first time.