Hybrid FinFET - Memristor based digital circuits for low power IC applications

Abstract

There are remarkable improvements in the behavior of transistors in CMOS technology after scaling them down to sub-micron levels. Nevertheless, several challenges arise from miniaturization, such as short channel effects (SCEs). A promising solution to overcome this issue is FinFET technology because as technology is scaling down, FinFET has better electrostatic control on the channel of the transistor than the conventional CMOS transistor. FinFET is highly used in present IC technology whereas Memristor is one of the future technologies for in-built computation and many more applications. Since both are low power devices, their combination leads to improved power dissipation. Further, this hybrid logic can also provide high speed operation than present technology. In this work, a brief review on present status of both the devices and their combination is presented. In support to this, the performance of Hybrid memristor-FinFET logic based simple combinational and sequential circuits simulated in cadence are analyzed and discussed in detail.