Abstract
Here we present a theoretical investigation of double well nanowire device that will be studied experimentally over a range of temperatures. Our nanowires are made from InAs with three InP barriers between which lie two InAs quantum wells. These wells have associated with them sharp electronic states between which electrons can tunnel. In the absence of a bias, resonant transmission of electrons is possible; but on applying a bias the levels in neighboring wells acquire different energies, thereby frustrating transmission. If the offset in energy is matched by the frequency of a phonon within the device that couples to the electrons in the wells then there will be a rise in current. We present here the results of simple device simulator calculations, on the basis of which the dimensions of an optimized device are determined.
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