Abstract
For zero temperature we present theoretical results for the transport properties of the electron gas in InAs quantum wells in the presence of interface-roughness scattering. We show how to analyze experimental data in connection with interface-roughness scattering. By comparison with recent experimental results obtained for the mobility of InAs quantum wells, we determine the interface roughness parameters as Δ=3.2Å and Λ=14Å. We predict the single-particle relaxation time (Dingle temperature) and a possible metal-insulator transition in these InAs quantum well structures.
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