Abstract
Hot electron spectroscopy was used to study transport through two GaAs/AlAs/GaAs heterostructures with undoped AlAs layers of 10 and 13 nm width. We observed transport through the individual bound states of the quantum well formed in the X-valley of the GaAs/AlAs/GaAs system. From the energetic positions of these bound states, we derived XAlAs − ΓGaAs= 136 meV for both samples and m*X,AlAs = (0.8 ± 0.1)m0 for the 10 nm sample and m*X,AlAs = (0.7 ± 0.1)m0 for the 13 nm sample.
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