Abstract
Hot electron spectroscopy has been performed on electrons which have tunneled through indirect AlAs potential barriers in a tunneling hot electron transfer amplifier. We find that only about 1% of the electrons are collected close to their injection energy in stark contrast to an otherwise identical structure with an Al0.5Ga0.5As barrier where this fraction was 30%. Measurements under hydrostatic pressure show clear evidence for the real-space transfer of electrons from the emitter electrode into an X-point barrier subband adjacent to the emitter Fermi band. A detailed analysis of hot electron spectra reveals that the transferred electrons undergo strong inelastic scattering within the AlAs barrier and relax down through the ladder of X-point subbands there before being reemitted into the base layer.
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