Hot electron spectroscopy: A novel method to study molecular semiconductor

Abstract

Molecular semiconductors, as the core component, determine the performance of different devices. It is essential to gain more knowledge of such materials. Hot electron spectroscopy, by applying a ballistic electron emission microscope and hot-electron transistor, has been demonstrated to be the most powerful method. This review concentrates on the achievements in several emerging fields, such as the interfacial energy level alignment and the charge transport characteristics in molecular film. As a versatile technique, hot electron spectroscopy has been found to be helpful in exploring the metal/molecule interface energy, the molecular levels, the electronic transport gap, and even the group structures. In comparison to the traditional techniques, such as ultraviolet photoemission spectroscopy, inverse photoemission spectroscopy, and scanning tunneling spectroscopy, this method offers in-situ characterizations, which makes the detection much more accurate and convenient. This review contributes to a deep comprehension of the intrinsic characteristics of molecular semiconductors and molecule-based devices. • Hot electron spectroscopy has recently been employed to determine the intrinsic lowest unoccupied molecular orbital. • Hot electron spectroscopy has been developed to determine the highest occupied molecular orbital. • Hot electron spectroscopy has applied to acquire more informations about molecular levels, such as the LUMO+1 level. • Hot electron spectroscopy provides a powerful approach to achieve a high-efficient spin injection.