Abstract

The effects of hot carrier injection on double-gate FinFETs with fin widths (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fin</sub> ) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fin</sub> exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.

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