Abstract
Hot carrier injection (HCI) effect has a great influence on device reliability. As the key dimensions (gate oxide thickness, depth of junction and channel length) of the device shrink, the maximum electric field intensity at the end of the drain increases, this will aggravate the HCI effect of device. Aiming at this problem that 55 nm 8V device could not pass the reliability test due to the serious HCI effect. This paper makes a systematic study on the mechanism of HCI effect. The LDD loop was transferred to the front of the gate loop. The effective channel length of the device was adjusted by optimizing the lightly doped drain (LDD) implantation distance. The distribution of the LDD was improved by the furnace tube technology of the gate growth. As a result, the HCI performance of the device is improved obviously. Finally, the HCI life of the IO8V device exceeded 1 year, far exceeding the evaluation standard of 0.2 years.
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