Impact of Fin Width and Back Bias Under Hot Carrier Injection on Double-Gate FinFETs

Abstract

This study compares the effects of n-channel double-gate FinFETs with fin widths $(W_{\rm fin} ) $ of 10 and 25 nm with those of such devices with back biases and hot carrier injection (HCI. Compared with the device with a wide $W_{\rm fin}$ , the device with a narrow $W_{\rm fin} $ exhibits a larger current tuning range but a more off-state current leakage at a positive back bias because of the forward-biased p-n junction and the higher degradation under HCI. The gate-induced drain leakage significantly deteriorates with a positive back bias after HCI because of the generation of interfacial charges. However, a negative back bias causing hot hole injection during HCI can alleviate the degradation compared with unbiased and positive-biased devices.