Abstract

Fabrication of single-crystalline organic semiconductor patterns is of key importance to enable practical applications. However due to the poor controllability on nucleation locations and the intrinsic anisotropic nature of single-crystals, growth of single-crystal patterns with homogeneous orientation is a big challenge especially by thevapor method. Herein a vapor growth protocol to achieve patterned organic semiconductor single-crystals with high crystallinity and uniform crystallographic orientation is presented. The protocol relies on the recently invented microspacing in-air sublimation assisted with surface wettability treatment to precisely pin the organic molecules at desired locations, and inter-connecting pattern motifs to induce homogeneous crystallographic orientation. Single-crystalline patterns with different shapes and sizes, and uniform orientation are demonstrated exemplarily by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT). Field-effect transistor arrays fabricate on the patterned C8-BTBT single-crystal patterns show uniform electrical performance: a 100% yield with an average mobility of 6.28cm2 V-1 s-1 and in a 5×8 array. The developed protocols overcome the uncontrollability of the isolated crystal patterns in vapor growth on non-epitaxial substrates, making it possible to align the anisotropic electronic nature of single-crystal patterns in large-scale devices integration.

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