Abstract
A molecular beam epitaxy (MBE) has been tried with Si as a solid source to modify the growing surface and monomethylsilane (MMS) as a gas source to build the crystal for homoepitaxial SiC depositions on 4H-SiC (0001) and (000-1) on–axis substrates. Atomic force microscopy (AFM) revealed that the step–flow growth and the two-dimensional island growth took place on the (0001) and the (000-1) substrates, respectively, instead of the three-dimensional island growth, when the films were grown with Si irradiation. The film crystalline polytype was identified as 4H-SiC in high resolution transmission electron microscopy (HRTEM) on the stacking sequence of the crystal. Raman scattering spectroscopy indicated that the films grown with the Si irradiation had less imperfection than those grown without it. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
