Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Abstract

Doping technology with stable carrier concentration regulation is a guarantee for optimizing β-Ga2O3-based high-power electronic devices and optoelectronic devices. In this study, β-Ga2O3 homoepitaxial epitaxial films with stable and tunable electron concentrations were grown on Fe-doped (010)-oriented β-Ga2O3 substrates by using metal-organic chemical vapor deposition (MOCVD). XRD shows that the basic bulk properties of β-Ga2O3 film, i. e. the structure and crystal orientation, are stable with low Si-doping, however, its electrical properties vary remarkably depending on concentrations of Si ions incorporated by Si source flow rate during the film growth process. Hall measurement is utilized to confirm high-quality β-Ga2O3 films with tunable electron concentration of 1017–1019 cm−3. As a consequence, the electron concentration-dependent behavior of β-Ga2O3 Schottky barrier diodes (SBDs) was studied. The β-Ga2O3 SBDs exhibited better forward current output electrical performance with reduction in built-in potential difference (Vbi) from 2.4 V to 0.3 V and on-resistance (Ron) from 257 Ω cm to 26 Ω cm. Our results suggest that stable and tunable electron concentration provides high-quality material assurance for constructing power electronic devices of Ga2O3.