Abstract
Single crystal indium phosphide (InP) layers were epitaxially grown on porous (001) InP surfaces with controlled porosities. Changes in the underlying porous layer structure, and hence its stability, during epitaxial growth at elevated temperatures were observed. The same change in the porous structure was achieved by only annealing under the same growth conditions. A 100%-layer transfer rate is demonstrated for annealed dual porous InP layers. Plan-view transmission electron microscopy (TEM) images of the epitaxial layer show that the layer is continuous over the porous underlayer and had a dislocation density lower than 3 × 106 cm−2. The high crystallinity of the epitaxy layer was verified by high resolution X-ray diffraction (HRXRD) rocking curve scans. These high quality epitaxial layers grown on porous InP show promise for active layers in thin, flexible high-performance devices, which are readily transferred from the growth substrate by fracture at the epitaxial-porous layer interface.
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