Abstract
The morphological quality criterion was developed to have a possibility of formation of nanostructured layers on semiconductor surface with adjustable properties. The layers of low-porous indium phosphide with mesoporous structure were obtained. The porous layers were formed by the method of electrochemical etching in the solution of hydrochloric acid at constant current density. According to the developed criterion, the quality of synthesized por-InP samples was analyzed. This will make it possible to manufacture the structures with porous layers on the surface on an industrial scale. The presented criterion can be applied to other modes of treatment of indium phosphide or to other semiconductors. This will make it possible to treat it as a universal morphological criterion of quality of porous structures. The correlation between morphological properties of porous structures on the surface of indium phosphide and etching conditions was established. To do this, porous structures, which were formed in the interval of etching time from 10 to 20 min at different concentration of acid in the electrolyte, were analyzed. As a result, it was established that the shape of the pores of nanostructured layers on the surface of semiconductors depends not only on parameters of a crystal, but also on etching conditions, specifically, on etching time and electrolyte composition. The application of saturated electrolytes leads to formation of massive groove-shaped pores – elongated ellipses. The obtained correlations are useful from the practical point of view, as they make it possible to approach reasonably determining the modes of electrochemical treatment of semiconductors. In addition, it opens up new prospects in the construction of the model of self-organization of a porous structure on the surface of semiconductors. The technique of calculating basic statistical characteristics of the series of distribution of pores by dimensions, specifically, the variation span, dispersion, mean deviation, coefficients of variation and asymmetry was presented. This makes it possible to evaluate in detail the morphological indicators of porous structures and to progress in understanding the mechanisms behind the pore formation on the surface of semiconductors during electrochemical treatment.
Highlights
Nanostructured semiconductors are of interest [1, 2] due to the possibility of their application in photonics and microelectronics [3, 4]
Porous structures are obtained on the surface of indium phosphide [11, 12], gallium phosphide [13, 14], gallium arsenide [15, 16], silicon [17], germanium [18], etc
The main problem with the synthesis by the electrochemical technology is obtaining structures with adjustable properties [33]. It concerns morphological characteristics of porous structures, as they determine the functional purpose of nanomaterial
Summary
Nanostructured semiconductors are of interest [1, 2] due to the possibility of their application in photonics and microelectronics [3, 4]. It extends the limits of application, on the other hand, leads to difficulties associated with the development of the criterion apparatus of evaluation of nanostructures quality indicators The interest in these structures was caused primarily by an increase in the area of effective surface [19]. Existence of quantum-dimensional effects is observed in porous structures [21] This property causes a shift of photoluminescence peaks to the short-wave part of the spectrum [22]. The main problem with the synthesis by the electrochemical technology is obtaining structures with adjustable properties [33] First of all, it concerns morphological characteristics of porous structures, as they determine the functional purpose of nanomaterial. Above all, to create standards and regulations that will make it possible to regulate the properties of nanostructures at the stage of their synthesis
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