Abstract
Homoepitaxial single-crystal beta gallium oxide (β-Ga2O3) films were fabricated by the mist chemical vapor deposition method. The crystallinity of the films grown markedly depended on growth temperature, and the optimum growth temperatures were found to be 700–800 °C. Using unintentionally doped β-Ga2O3 films grown on Sn-doped β-Ga2O3(010) substrates, the fabrication of Schottky barrier diodes was demonstrated. Furthermore, we fabricated electrically conductive Sn-doped β-Ga2O3 films on semi-insulating Fe-doped β-Ga2O3(010) substrates. The carrier concentrations were between 1 × 1018 and 5 × 1020 cm−3. The Hall mobility was 45 cm2 V−1 s−1 at the carrier concentration of 1 × 1018 cm−3.
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