Abstract
During crystallization of GaN in the c-direction by halide vapor phase epitaxy the formation of semi-polar facets as well as growth in semi-polar directions are observed. Crystallization process on these semi-polar facets is described in this paper in detail. Ammonothermal GaN crystals were used as seeds. Morphology, structural quality, growth rate, impurities concentration and free carrier concentration are analyzed and compared to data obtained for crystals grown in the c-direction.
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