Abstract
One of the main advantages of the hydride vapor phase epitaxy (HVPE) method for crystallizing bulk gallium nitride is the crystallization of GaN with a relatively high growth rate (>100μm/h). In this paper various growth rates in the c-direction during crystallization of GaN by HVPE on ammonothermally grown GaN crystals are determined and examined. The influence of the highest (380μm/h) and the lowest (40μm/h) growth rate on the structural quality and purity of the HVPE-GaN crystals is analyzed. The optimal macroscopically stable growth rate (without cracks and pits) and the way of achieving it are presented and discussed.
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