The effects of growth temperature on the crystallinity of GaN in gallium hydride vapor phase epitaxy method

Abstract

AbstractHigh temperature growth was investigated as a way of improving the crystallinity and surface morphology of the gallium hydride vapor phase epitaxy (GaH‐VPE) crystal growth method. In this method, gallium hydride (GaHx: x=1, 2, 3) is characteristically used as a Ga source to grow GaN crystals. We previously confirmed that the growth rate of GaN increased with GaHx supply and could attain almost the same rate as that of the hydride vapor phase epitaxy (HVPE) method. However, an improvement of the surface morphology and crystallinity of GaN crystals was required. In the present study, the dependence of growth temperature on the crystallinity and the surface morphology of grown crystals was investigated, resulting in both a flat surface and an improvement in crystallinity at temperatures higher than 1150 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)